18454505. DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Display Co., LTD.)

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Organization Name

Samsung Display Co., LTD.

Inventor(s)

Donghyun Son of Yongin-si (KR)

Sola Lee of Yongin-si (KR)

Kiyoung Kim of Yongin-si (KR)

Jongseok Kim of Yongin-si (KR)

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18454505 titled 'DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a display apparatus with a substrate that has a component area, a main area, and a bending area. The apparatus includes a buffer layer, a semiconductor layer, and a gate insulating layer with an opening and a through-hole.

• The display apparatus includes a substrate with different areas and a bending area.
• A buffer layer is placed on the substrate, followed by a semiconductor layer.
• A gate insulating layer overlaps the semiconductor layer and has an opening and a through-hole.
• The opening has a smaller angle with respect to the substrate surface compared to the through-hole.

1. 1. 1. Potential Applications

• Flexible displays for smartphones, tablets, and wearable devices.
• Curved displays for automotive dashboards and instrument panels.

1. 1. 1. Problems Solved

• Allows for bending of the display without damaging the semiconductor layer.
• Ensures proper functioning of the display in curved or flexible configurations.

1. 1. 1. Benefits

• Increased durability and flexibility of displays.
• Enables innovative design possibilities for various electronic devices.

Original Abstract Submitted

A display apparatus includes a substrate including a component area including a transmission area, a main area outside the component area, and a bending area bent based on a bending axis, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer, and a first gate insulating layer overlapping the first semiconductor layer and including a 1-1opening corresponding to the bending area, and a 1-1through-hole exposing a portion of the first semiconductor layer. A first acute angle formed by an inner surface of the 1-1opening with respect to an upper surface of the substrate is less than a first contact acute angle formed by an inner surface of the 1-1through-hole with respect to the upper surface of the substrate.