18151609. 3DIC Package and Method Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
3DIC Package and Method Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ching-Yu Huang of Hsinchu (TW)
Kuo-Chiang Ting of Hsinchu (TW)
3DIC Package and Method Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151609 titled '3DIC Package and Method Forming the Same
Simplified Explanation
- Method involves bonding a first device die to a second device die through face-to-face bonding. - Forming a gap-filling region to encircle the first device die. - Performing a backside-grinding process on the device wafer to reveal a through-via in the second device die. - Forming a redistribution structure on the backside of the device wafer, electrically connected to the first device die through the through-via in the second device die. - Bonding a supporting substrate to the first device die.
Potential Applications
- Semiconductor industry for advanced packaging technologies. - Microelectronics for creating complex integrated circuits.
Problems Solved
- Enhances electrical connectivity between device dies. - Improves thermal management and reliability of the devices.
Benefits
- Enables higher performance and functionality in electronic devices. - Enhances miniaturization and integration capabilities in semiconductor devices.
Original Abstract Submitted
A method includes bonding a first device die to a second device die through face-to-face bonding, wherein the second device die is in a device wafer, forming a gap-filling region to encircle the first device die, performing a backside-grinding process on the device wafer to reveal a through-via in the second device die, and forming a redistribution structure on the backside of the device wafer. The redistribution structure is electrically connected to the first device die through the through-via in the second device die. A supporting substrate is bonded to the first device die.
