18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Gate Structures For Semiconductor Devices
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Fai Cheng of Tin Shui Wai (HK)
Chang-Miao Liu of Hsinchu City (TW)
Kuan-Chung Chen of Taipei City 111 (TW)
Gate Structures For Semiconductor Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 18388419 titled 'Gate Structures For Semiconductor Devices
Simplified Explanation
- A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. - The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions. - Performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer. - Performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. - The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. - The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. - Depositing a work function metal layer on the high-K dielectric layer. - Depositing a metal fill layer on the work function metal layer.
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- Potential Applications
- Advanced semiconductor devices - High-performance electronics - Next-generation computing systems
- Problems Solved
- Enhancing performance of semiconductor devices - Improving efficiency of electronic components - Enabling higher processing speeds in electronics
- Benefits
- Increased speed and efficiency in electronic devices - Enhanced performance of semiconductor components - Potential for development of more advanced technologies
Original Abstract Submitted
A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer
