18298574. WAVELENGTH TUNING IN SILICON PHOTONICS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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WAVELENGTH TUNING IN SILICON PHOTONICS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Beih-Tzun Lin of Hsinchu (TW)

Chi-Yuan Shih of Hsinchu (TW)

Feng Yuan of Hsinchu (TW)

Shih-Fen Huang of Zhubei (TW)

WAVELENGTH TUNING IN SILICON PHOTONICS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18298574 titled 'WAVELENGTH TUNING IN SILICON PHOTONICS

Simplified Explanation

The abstract describes a method of wavelength tuning in a silicon photonics circuit involving a ring resonator and a dielectric layer.

  • Receiving a bus waveguide, a ring resonator optically coupled to the bus waveguide, and a dielectric layer over both components.
  • Performing a first heat process at a first temperature to heat up the dielectric layer.
  • The first heat process shifts the initial resonance wavelength of the ring resonator to a shorter first resonance wavelength.
  • The first heat process permanently shifts the initial resonance wavelength to the first resonance wavelength, which is the wavelength when no heat is applied to the ring resonator.

Potential Applications

  • Optical communications
  • Sensing applications
  • Quantum computing

Problems Solved

  • Precise wavelength tuning in silicon photonics circuits
  • Enhanced performance of ring resonators
  • Increased flexibility in optical signal processing

Benefits

  • Improved control over wavelength tuning
  • Enhanced functionality of silicon photonics circuits
  • Increased efficiency in optical signal processing


Original Abstract Submitted

A method of wavelength tuning in a silicon photonics circuit includes receiving a bus waveguide, a ring resonator optically coupled to the bus waveguide, and a dielectric layer over the bus waveguide and over the ring resonator. The method further includes performing a first heat process at a first temperature to heat up the dielectric layer, where the first heat process shifts an initial resonance wavelength of the ring resonator to a first resonance wavelength shorter than the initial resonance wavelength. The first heat process permanently shifts the initial resonance wavelength to the first resonance wavelength, the first resonance wavelength being a wavelength when no heat is being applied to the ring resonator.