20240051818. SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED)
Contents
SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
Inventor(s)
Hsi-Cheng Hsu of Taichung City (TW)
Chen-Wei Chiang of Hsinchu City (TW)
Jui-Chun Weng of Taipei City (TW)
Hsin-Yu Chen of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240051818 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING
Simplified Explanation
The abstract describes a semiconductor device that includes a semiconductor layer, a micro-electromechanical systems (MEMS) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the MEMS structure and bonded to the bond ring. The MEMS structure has an upper surface, and the cap structure has a lower surface facing the upper surface of the MEMS structure. Dimples of eutectic material are present on the upper surface of the MEMS structure.
- The semiconductor device includes a semiconductor layer, MEMS structure, bond ring, and cap structure.
- The MEMS structure is defined within the semiconductor layer.
- The cap structure is positioned over the MEMS structure and bonded to the bond ring.
- Dimples of eutectic material are present on the upper surface of the MEMS structure.
Potential applications of this technology:
- MEMS devices: The semiconductor device can be used in various MEMS applications such as sensors, actuators, and switches.
- Semiconductor manufacturing: The technology can be utilized in the fabrication of semiconductor devices with MEMS structures.
Problems solved by this technology:
- Integration: The semiconductor device allows for the integration of MEMS structures within a semiconductor layer, enabling compact and efficient designs.
- Bonding: The bond ring and cap structure provide a reliable bonding mechanism for the MEMS structure, ensuring proper functionality.
Benefits of this technology:
- Miniaturization: The integration of MEMS structures within the semiconductor layer allows for smaller and more compact devices.
- Improved performance: The reliable bonding provided by the bond ring and cap structure ensures the proper functioning of the MEMS structure, leading to improved device performance.
- Manufacturing efficiency: The technology simplifies the manufacturing process by enabling the fabrication of MEMS devices within the semiconductor layer, reducing the need for additional assembly steps.
Original Abstract Submitted
in some embodiments, a semiconductor device is provided. the semiconductor device includes a semiconductor layer, a micro-electromechanical systems (mems) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the mems structure and bonded to the bond ring. the mems structure has an upper surface and the cap structure has a lower surface facing the upper surface of the mems structure. dimples of eutectic material are on the upper surface of the mems structure.
