17877970. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shahaji B. More of Hsinchu (TW)
Cheng-Wei Chang of Taipei (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17877970 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a semiconductor device structure and methods of forming it. The structure includes asymmetric first and second source/drain epitaxial features in a first region, with a first dielectric feature between them. A conductive feature is disposed over the epitaxial features and the dielectric feature.
- The semiconductor device structure includes asymmetric source/drain epitaxial features and a dielectric feature.
- A conductive feature is disposed over the epitaxial features and the dielectric feature.
- The structure is formed using specific methods.
Potential Applications:
- This semiconductor device structure can be used in various electronic devices, such as integrated circuits, microprocessors, and memory devices.
- It can be applied in the field of telecommunications, consumer electronics, automotive electronics, and more.
Problems Solved:
- The asymmetric design of the source/drain epitaxial features allows for improved performance and functionality of the semiconductor device.
- The presence of the dielectric feature helps in isolating and protecting the epitaxial features.
Benefits:
- The asymmetric structure enhances the electrical characteristics of the semiconductor device, leading to improved performance and efficiency.
- The use of the dielectric feature provides insulation and protection, reducing the risk of damage and improving reliability.
- The conductive feature allows for efficient electrical connections and signal transmission within the device.
Original Abstract Submitted
A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first source/drain epitaxial feature disposed in a first region, and the first source/drain epitaxial feature is asymmetric with respect to a fin. The structure further includes a second source/drain epitaxial feature disposed in the first region, a first dielectric feature disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, and a conductive feature disposed over the first and second source/drain epitaxial features and the first dielectric feature.
