US Patent Application 17714630. METHOD OF FORMING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF FORMING SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chieh-Wei Chen of Hsinchu (TW)
Tzu-Ang Chiang of Hsinchu (TW)
METHOD OF FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17714630 Titled 'METHOD OF FORMING SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a method for creating a semiconductor device. The process involves creating a structure with source/drain regions, a fin, and a dummy gate. The dummy gate is then removed to create a gate trench. A gate dielectric layer and a work function structure are added to the trench. A resist layer is applied to fill the trench, and then the top portion of the resist layer is removed. The exposed work function structure is then removed using a wet chemical etchant. The resist layer is then removed, and a conductive gate is formed in the trench.
Original Abstract Submitted
A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.
