US Patent Application 17715967. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Cheng Chao of Hsinchu City (TW)
Hsin-Chieh Huang of Taoyuan (TW)
Yu-Wen Wang of New Taipei City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17715967 Titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'
Simplified Explanation
The abstract describes a manufacturing method for a semiconductor device. The method involves creating a stack of alternating layers of different types of semiconductor materials. A patterned mask layer is then formed on the topmost layer of the stack. A trench is created in the stack using the patterned mask layer as a guide, resulting in the formation of a fin structure. A cladding layer is then applied along the sidewalls of the fin structure. The patterned mask layer and a portion of the cladding layer are removed using a two-step etching process. This removal results in the formation of cladding spacers with a concave top surface that gradually deepens from the sidewalls of the fin structure.
Original Abstract Submitted
A manufacturing method of a semiconductor device includes forming a stack of first semiconductor layers and second semiconductor layers alternatively formed on top of one another, where a topmost layer of the stack is one of the second semiconductor layers; forming a patterned mask layer on the topmost layer of the stack; forming a trench in the stack based on the patterned mask layer to form a fin structure; forming a cladding layer extending along sidewalls of the fin structure; and removing the patterned mask layer and a portion of the cladding layer by performing a two-step etching process, where the portion of the cladding layer is removed to form cladding spacers having a concave top surface with a recess depth increasing from the sidewalls of the fin structure.
