17651990. Forming Dielectric Film With High Resistance to Tilting simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Forming Dielectric Film With High Resistance to Tilting
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ming-Tsung Lee of Hsinchu (TW)
Yi-Wen Pan of New Taipei City (TW)
Tzu-Nung Lu of Taoyuan City (TW)
Forming Dielectric Film With High Resistance to Tilting - A simplified explanation of the abstract
This abstract first appeared for US patent application 17651990 titled 'Forming Dielectric Film With High Resistance to Tilting
Simplified Explanation
The patent application describes a method for forming a structure in a semiconductor device using a dielectric layer and a sacrificial spacer layer. The method involves depositing the dielectric layer over a substrate and etching it to expose a conductive feature. A sacrificial spacer layer is then deposited and patterned to form a ring around the conductive feature. A second conductive feature is formed within the ring, and then a portion of the ring is removed to create an air spacer.
- The method involves depositing a dielectric layer over a substrate and etching it to expose a conductive feature.
- A sacrificial spacer layer is then deposited and patterned to form a ring around the conductive feature.
- A second conductive feature is formed within the ring, and then a portion of the ring is removed to create an air spacer.
Potential applications of this technology:
- Semiconductor devices
- Integrated circuits
- Microprocessors
Problems solved by this technology:
- Formation of a structure with improved electrical coupling between conductive features
- Creation of an air spacer for improved device performance
Benefits of this technology:
- Enhanced electrical coupling between conductive features
- Improved device performance through the use of an air spacer
Original Abstract Submitted
A method includes depositing a dielectric layer over a substrate, and etching the dielectric layer to form an opening and to expose a first conductive feature underlying the dielectric layer. The dielectric layer is formed using a precursor including nitrogen therein. The method further includes depositing a sacrificial spacer layer extending into the opening, and patterning the sacrificial spacer layer to remove a bottom portion of the sacrificial spacer layer. A vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.
