18156752. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Meng-Hung Shen of Hsinchu (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156752 titled 'MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method of making a semiconductor structure. Here is a simplified explanation of the abstract:
- The method starts by creating a recess in an insulation layer.
- A protection layer is then formed along the sidewall of the recess.
- A conductive line is formed in the recess, making direct contact with the protection layer.
- An insulation material is deposited over the conductive line.
- Another recess is defined in the insulation material.
- A second conductive line is formed in the second recess.
- A via is created from the second conductive line, directly contacting the sidewall of the protection layer.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit fabrication
Problems solved by this technology:
- Provides a method for creating a semiconductor structure with improved conductivity and insulation properties.
- Allows for the formation of multiple conductive lines in a compact space.
Benefits of this technology:
- Enhanced performance and reliability of semiconductor devices.
- Increased efficiency in circuit design and layout.
- Enables the creation of more complex and compact integrated circuits.
Original Abstract Submitted
A method of making a semiconductor structure includes defining a first recess in an insulation layer. The method further includes forming a protection layer along a sidewall of the first recess. The method further includes forming a first conductive line in the first recess and in direct contact with the protection layer. The method further includes depositing a first insulation material over the first conductive line. The method further includes defining a second recess in the first insulation material. The method further includes forming a second conductive line in the second recess. The method further includes forming a via extending from the second conductive line, wherein the via directly contacts a sidewall of the protection layer.
