18156707. STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hiroki Noguchi of Hsinchu City (TW)
Ku-Feng Lin of New Taipei City (TW)
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156707 titled 'STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
Simplified Explanation
The patent application describes a memory device that includes multiple sense amplifiers and at least one reference cell. The sense amplifiers have two terminals and are connected to a memory cell block. The second terminals of the sense amplifiers are connected together to transmit a read current. The reference cell, on the other hand, transmits the read current to a ground terminal. The resistance value of the reference cell decreases as the number of sense amplifiers increases.
- The memory device has multiple sense amplifiers and at least one reference cell.
- The sense amplifiers are connected to a memory cell block.
- The second terminals of the sense amplifiers are connected together to transmit a read current.
- The reference cell transmits the read current to a ground terminal.
- The resistance value of the reference cell decreases as the number of sense amplifiers increases.
Potential Applications
- Memory devices in electronic devices such as computers, smartphones, and tablets.
- Data storage systems in cloud computing and data centers.
- Embedded memory in various consumer electronics.
Problems Solved
- Improved performance and reliability of memory devices.
- Enhanced read current transmission efficiency.
- More accurate and reliable data storage and retrieval.
Benefits
- Increased speed and efficiency in reading data from memory cells.
- Improved reliability and accuracy of memory operations.
- Cost-effective implementation of memory devices.
- Enhanced overall performance of electronic devices.
Original Abstract Submitted
A memory device is provided. The memory device includes several sense amplifiers and at least one reference cell. Each of the sense amplifiers has a first terminal and a second terminal. The first terminals of the sense amplifiers are coupled to a memory cell block, and the second terminals of the sense amplifiers are coupled together to transmit a read current. The at least one reference cell transmits the read current to a ground terminal. The at least one reference cell has a decreased resistance value when a number N of the sense amplifiers increases.
