17674977. Deposition Apparatus and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Deposition Apparatus and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Po-Hsien Cheng of Hsinchu (TW)
Deposition Apparatus and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 17674977 titled 'Deposition Apparatus and Method
Simplified Explanation
The patent application describes a deposition apparatus and method for depositing a layer on a substrate using a precursor material and electromagnetic (EM) radiation. Here are the bullet points explaining the patent/innovation:
- A substrate is placed on a platform inside a chamber of a deposition system.
- A precursor material is introduced into the chamber.
- A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber.
- A plasma is generated from the precursor material in the chamber, which includes dissociated components of the precursor material.
- The plasma is subjected to a first EM radiation from the first EM radiation source, further dissociating the precursor material.
- A layer is deposited over the substrate, which is a reaction product of the dissociated components of the precursor material.
Potential applications of this technology:
- Thin film deposition for electronic devices such as semiconductors, solar cells, and displays.
- Coating applications in industries like automotive, aerospace, and medical devices.
- Creation of protective layers on various surfaces to enhance durability and performance.
Problems solved by this technology:
- Enables precise control over the deposition process, ensuring uniform and high-quality layers.
- Enhances the dissociation of precursor materials, leading to improved layer formation.
- Reduces the risk of contamination and defects in the deposited layers.
Benefits of this technology:
- Improved efficiency and reliability in the deposition process.
- Enhanced control over layer properties such as thickness, composition, and structure.
- Enables the deposition of complex and high-performance layers.
- Reduces the need for post-processing treatments, saving time and costs.
Original Abstract Submitted
A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.
