18055485. Hybrid Memory Device And Electronic Device Including Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Hybrid Memory Device And Electronic Device Including Same
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
Hybrid Memory Device And Electronic Device Including Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18055485 titled 'Hybrid Memory Device And Electronic Device Including Same
Simplified Explanation
The abstract describes a hybrid memory device that consists of two transistors formed on the same substrate and operating as different types of memories. The first transistor includes a channel region, a gate electrode, and a memory layer, while the second transistor includes a channel region made of the same material as the first transistor, a gate electrode, and a memory layer.
- The hybrid memory device is highly integrated, allowing for a compact memory system.
- The device utilizes two transistors that function as different types of memories.
- The first transistor and the second transistor are formed on the same substrate, simplifying the manufacturing process.
Potential Applications
- The hybrid memory device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in data storage systems, improving the efficiency and capacity of memory.
- The device can be integrated into artificial intelligence systems, enabling faster and more efficient data processing.
Problems Solved
- The hybrid memory device solves the problem of limited memory capacity in electronic devices by providing a highly integrated memory system.
- It addresses the need for different types of memories in a compact form factor, allowing for more efficient data storage and retrieval.
- The device solves the manufacturing complexity by forming both transistors on the same substrate.
Benefits
- The hybrid memory device offers increased memory capacity and performance in a compact form factor.
- It provides flexibility by allowing two transistors to function as different types of memories.
- The device simplifies the manufacturing process by forming both transistors on the same substrate.
Original Abstract Submitted
A hybrid memory device includes a first transistor including a first channel region, a first gate electrode facing and spaced apart from the first channel region, and a first memory layer arranged between the first channel region and the first gate electrode, and a second transistor including a second channel region including a same material as the first channel region, a second gate electrode facing and spaced apart from the second channel region, and a second memory layer arranged between the second channel region and the second gate electrode, wherein the hybrid memory device is used as a highly integrated memory system by two transistors that are formed on a same substrate and operate as different types of memories.
