17986237. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17986237 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device and a semiconductor apparatus that incorporates this device. The device consists of a substrate with a channel layer containing a dopant, a ferroelectric layer on top of the channel layer, and a gate on the ferroelectric layer. The channel layer has a specific doping concentration.
- The semiconductor device includes a substrate with a channel layer, a ferroelectric layer, and a gate.
- The channel layer contains a dopant, which is a substance added to the material to modify its electrical properties.
- The ferroelectric layer is positioned on top of the channel layer.
- The gate is placed on the ferroelectric layer.
- The channel layer has a specific doping concentration ranging from 1×10cm to 1×10cm.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as transistors, memory cells, and logic gates.
- It can be employed in the development of high-performance integrated circuits.
- The device's unique structure and doping concentration make it suitable for applications requiring precise control of electrical properties.
Problems solved by this technology:
- The inclusion of the ferroelectric layer provides additional functionality to the semiconductor device.
- The specific doping concentration in the channel layer allows for improved performance and control of electrical properties.
- The device's design addresses the need for more efficient and reliable semiconductor components.
Benefits of this technology:
- The semiconductor device offers enhanced performance due to the presence of the ferroelectric layer and the specific doping concentration.
- It provides improved control over electrical properties, allowing for more precise operation.
- The device's design enables the development of advanced electronic devices with higher efficiency and reliability.
Original Abstract Submitted
Provided are a semiconductor device and a semiconductor apparatus including the semiconductor device. The semiconductor device includes a substrate having a channel layer comprising a dopant, a ferroelectric layer on the channel layer; and a gate on the ferroelectric layer. The channel layer has a doping concentration of 1×10cmto 1×10cm.
