17885822. MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jung Min You of Hwaseong-si (KR)

Seong-Jin Cho of Hwaseong-si (KR)

MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17885822 titled 'MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

Simplified Explanation

The abstract describes a memory device that includes a memory cell array and a control logic. The control logic performs a refresh operation in response to a refresh command and generates an internal mode register write command in a first mode, but not in a second mode.

• The memory device includes a memory cell array with multiple memory cells.
• The control logic has a mode register and performs a refresh operation when a refresh command is received.
• In the first mode, the control logic generates an internal mode register write command in response to the refresh command.
• However, in the second mode, the control logic does not generate the internal mode register write command when the refresh command is received.

Potential applications of this technology:

• Memory devices in computers, smartphones, and other electronic devices.
• Data storage in cloud computing systems.
• Embedded systems and microcontrollers.

Problems solved by this technology:

• Ensures efficient refresh operations in memory devices.
• Allows for different modes of operation based on the refresh command.
• Provides flexibility in controlling the internal mode register write command generation.

Benefits of this technology:

• Improved performance and reliability of memory devices.
• Enhanced control over the refresh operations.
• Enables customization of the memory device's behavior based on different modes.

Original Abstract Submitted

According to an embodiment, a memory device includes a memory cell array including a plurality of memory cells; and a control logic which includes a mode register, performs a refresh operation in response to a refresh command, generates an internal mode register write command in response to the refresh command in a first mode, and does not generate the internal mode register write command in response to the refresh command in a second mode.