17843263. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jinkyu Kim of Boryeong-si (KR)
Myunggil Kang of Suwon-si (KR)
Dongwon Kim of Seongnam-si (KR)
Jaechul Kim of Hwaseong-si (KR)
Sanghoon Lee of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17843263 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with two device regions, active regions on the substrate, and channel layers spaced apart from each other. Gate structures and source/drain regions are also provided on the substrate.
- The semiconductor device has a substrate with two device regions.
- Active regions are present on the substrate and have a constant width.
- The active regions include four regions, two on each device region.
- Channel layers are spaced apart from each other in a direction perpendicular to the substrate.
- Gate structures extend across the active regions and channel layers.
- Source/drain regions are located on at least one side of the gate structures.
Potential Applications
This technology could be applied in various fields, including:
- Electronics industry
- Semiconductor manufacturing
- Integrated circuit design
Problems Solved
The semiconductor device addresses several challenges, such as:
- Efficient utilization of substrate space
- Enhanced performance and functionality of the device
- Improved integration of active regions and channel layers
Benefits
The use of this semiconductor device offers several advantages, including:
- Increased device density on the substrate
- Enhanced performance and functionality of the device
- Improved manufacturing efficiency and cost-effectiveness
Original Abstract Submitted
A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.
