17746247. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
VARIABLE RESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
VARIABLE RESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17746247 titled 'VARIABLE RESISTANCE MEMORY DEVICE
Simplified Explanation
The patent application describes a variable resistance memory device that includes a stack of insulating sheets and conductive sheets, with a vertical hole passing through them.
- The stack includes a bit line and a conductive pattern connected to the bit line, both extending vertically in the hole.
- A resistance varying layer is present between the conductive pattern and the inner side surface of the stack.
- The resistance varying layer consists of a first carbon nanotube connected to the conductive sheets and a second carbon nanotube connected to the conductive pattern.
Potential applications of this technology:
- Memory devices: The variable resistance memory device described in the patent application can be used in various memory applications, such as non-volatile memory or random access memory.
- Data storage: The device's ability to vary resistance allows for efficient data storage and retrieval, making it suitable for use in solid-state drives or other data storage systems.
- Computing systems: The memory device can be integrated into computing systems, improving their performance and efficiency.
Problems solved by this technology:
- Memory density: The use of a vertical hole and a stack of insulating and conductive sheets allows for increased memory density, enabling more data to be stored in a smaller space.
- Resistance variation: The presence of the resistance varying layer, consisting of carbon nanotubes, enables precise control of resistance levels, leading to reliable and efficient data storage.
Benefits of this technology:
- Increased storage capacity: The variable resistance memory device offers higher memory density, allowing for larger amounts of data to be stored in a compact form.
- Faster data access: The device's ability to vary resistance enables faster data access and retrieval, improving overall system performance.
- Energy efficiency: The use of carbon nanotubes in the resistance varying layer contributes to energy efficiency, reducing power consumption in memory devices.
Original Abstract Submitted
A variable resistance memory device including a stack including insulating sheets and conductive sheets, which are alternatingly stacked on a substrate, the stack including a vertical hole vertically penetrating therethrough, a bit line on the stack, a conductive pattern electrically connected to the bit line and vertically extending in the vertical hole, and a resistance varying layer between the conductive pattern and an inner side surface of the stack defining the vertical hole may be provided. The resistance varying layer may include a first carbon nanotube electrically connected to the conductive sheets, and a second carbon nanotube electrically connected to the conductive pattern.
