17857532. PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Gae Hwang Lee of Seongnam-si (KR)

Hyun Bum Kang of Yongin-si (KR)

Youngjun Yun of Seongnam-si (KR)

Jong Won Chung of Hwaseong-si (KR)

PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17857532 titled 'PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE

Simplified Explanation

The abstract describes a photodiode element and its application in a sensor and electronic device. The photodiode element consists of a first electrode, a second electrode, a photoelectric conversion layer, a light-emitting layer, and a first charge transport layer.

• The photodiode element has a first electrode and a second electrode facing each other.
• A photoelectric conversion layer is placed between the first and second electrodes, which absorbs light in a specific wavelength range.
• A light-emitting layer is positioned between the photoelectric conversion layer and the second electrode, emitting light at a wavelength within the same range.
• A first charge transport layer is located between the photoelectric conversion layer and the light-emitting layer.

Potential applications of this technology:

• Optical sensors in various electronic devices such as smartphones, cameras, and wearable devices.
• Biomedical imaging devices for capturing images in specific wavelength ranges.
• Industrial applications for detecting and measuring light in specific wavelength ranges.

Problems solved by this technology:

• Efficient conversion of light into electrical signals by utilizing the photoelectric conversion layer.
• Precise emission of light at a specific wavelength by the light-emitting layer.
• Improved charge transport between the photoelectric conversion and light-emitting layers.

Benefits of this technology:

• Enhanced sensitivity and accuracy in detecting and measuring light.
• Improved efficiency and performance of optical sensors.
• Enables the development of compact and high-resolution imaging devices.

Original Abstract Submitted

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.