18060372. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME
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DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18060372 titled 'DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a domain switching device that includes various components such as a channel region, source and drain regions, gate electrode, anti-ferroelectric layer, conductive layer, and barrier layer.
- The device has a channel region, source region, and drain region connected to the channel region.
- It includes a gate electrode that is isolated from the channel region.
- An anti-ferroelectric layer is placed between the channel region and the gate electrode.
- A conductive layer is present between the gate electrode and the anti-ferroelectric layer to establish contact.
- A barrier layer is positioned between the anti-ferroelectric layer and the channel region.
Potential applications of this technology:
- Memory devices: The domain switching device can be used in memory devices to store and retrieve data.
- Logic circuits: It can be utilized in logic circuits for performing various computational tasks.
- Sensor devices: The device can be employed in sensor devices to detect and measure different physical quantities.
Problems solved by this technology:
- Improved performance: The domain switching device offers enhanced performance compared to traditional devices.
- Reduced power consumption: It helps in reducing power consumption, making it more energy-efficient.
- Increased reliability: The device provides increased reliability and stability in operation.
Benefits of this technology:
- Faster operation: The domain switching device enables faster switching and data processing.
- Lower power consumption: It helps in reducing energy consumption, leading to cost savings.
- Enhanced reliability: The device offers improved reliability and stability in various applications.
Original Abstract Submitted
A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.
