17712319. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Junghwan Chun of Anyang-si (KR)
Koungmin Ryu of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17712319 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes a gate structure, source and drain layers, contact plugs, and insulation patterns with different carbon concentrations. The device aims to improve the performance and efficiency of semiconductor devices.
- The semiconductor device includes a gate structure, source and drain layers, contact plugs, and insulation patterns.
- The insulation pattern structure has different carbon concentrations.
- The device is designed to be disposed on a substrate.
- The first contact plug is disposed on the source and drain layer.
- The second contact plug is disposed on the gate structure.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Improves the performance and efficiency of semiconductor devices
- Enhances the functionality and reliability of integrated circuits
- Reduces power consumption and heat generation in electronic devices
Benefits of this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced functionality and reliability of integrated circuits
- Reduced power consumption and heat generation in electronic devices
- Potential for smaller and more compact electronic devices.
Original Abstract Submitted
A semiconductor device includes a gate structure disposed on a substrate; a source and drain layer disposed on the substrate adjacent the gate structure; a first contact plug disposed on the source and drain layer; an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and a second contact plug disposed on the gate structure.
