17575147. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chiung-Yuan Lin of Hsinchu County (TW)

Tsung-Fu Yang of Hsinchu City (TW)

Weicheng Chu of Tainan City (TW)

Ching Liang Chang of Tainan City (TW)

Chen Han Chou of Tainan City (TW)

Chia-Ho Yang of Taoyuan City (TW)

Tsung-Kai Lin of Nantou County (TW)

Tsung-Han Lin of Hsinchu City (TW)

Chih-Hung Chung of Hsinchu City (TW)

Chenming Hu of Oakland CA (US)

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17575147 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that uses a 2-D material layer made of a transition metal dichalcogenide (TMD). The device includes a substrate, source/drain contacts, and a gate electrode. The 2-D material layer has source/drain regions and a channel region between them. The binding energy of transition metal atoms in the channel region is different from that in the source/drain regions.

• The semiconductor device includes a 2-D material layer made of a transition metal dichalcogenide (TMD).
• The 2-D material layer has source/drain regions and a channel region between them.
• The binding energy of transition metal atoms in the channel region is different from that in the source/drain regions.
• The device includes a substrate, source/drain contacts, and a gate electrode.

Potential applications of this technology:

• Improved performance and efficiency in semiconductor devices.
• Enhanced control over the behavior of transition metal atoms in the 2-D material layer.

Problems solved by this technology:

• In conventional semiconductor devices, the binding energy of transition metal atoms is the same throughout the material layer, limiting control and performance.
• This technology solves the problem by introducing a difference in binding energy between the channel region and the source/drain regions.

Benefits of this technology:

• Increased control over the behavior of transition metal atoms allows for better device performance.
• The use of a 2-D material layer made of a transition metal dichalcogenide offers potential improvements in efficiency and functionality.

Original Abstract Submitted

A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.