17702137. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17702137 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with various components and structures for improved electrical connections and performance.
- The device includes circuit devices on a first substrate.
- There is a lower interconnection structure that connects to the circuit devices.
- A lower bonding structure is connected to the lower interconnection structure.
- An upper bonding structure is placed on the lower bonding structure.
- An upper interconnection structure is connected to the upper bonding structure.
- A second substrate is positioned on the upper interconnection structure.
- Gate electrodes are present between the upper interconnection structure and the second substrate.
- Channel structures, each with a channel layer, penetrate the gate electrodes.
- Via patterns are located on the second substrate.
- A source contact plug, higher than the second substrate, is spaced apart from it on the external side.
- A source connection pattern contacts the upper surfaces of the via patterns and the upper surface of the source contact plug.
Potential applications of this technology:
- Semiconductor devices for various electronic applications.
- Integrated circuits for computers, smartphones, and other electronic devices.
- Power electronics for energy conversion and control systems.
- Sensors and detectors for various industries.
Problems solved by this technology:
- Improved electrical connections between different components of the semiconductor device.
- Enhanced performance and reliability of the device.
- Efficient integration of circuit devices and interconnection structures.
- Better control and functionality of gate electrodes and channel structures.
Benefits of this technology:
- Higher performance and reliability of semiconductor devices.
- Improved electrical connections leading to better signal transmission.
- Enhanced integration and miniaturization of electronic components.
- Increased efficiency and functionality of power electronics.
- Potential for cost reduction and improved manufacturing processes.
Original Abstract Submitted
A semiconductor device includes: circuit devices on a first substrate; a lower interconnection structure electrically connected to the circuit devices; a lower bonding structure connected to the lower interconnection structure; an upper bonding structure on the lower bonding structure; an upper interconnection structure connected to the upper bonding structure; a second substrate on the upper interconnection structure; gate electrodes between the upper interconnection structure and the second substrate; channel structures penetrating the gate electrodes and each including a channel layer; via patterns on the second substrate; a source contact plug spaced apart from the second substrate on an external side of the second substrate and having an upper surface higher than the second substrate and a lower surface lower than a lowermost gate electrode; and a source connection pattern contacting upper surfaces of each of the via patterns and the upper surface of the source contact plug.
