17862675. MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)

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MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO.,LTD.

Inventor(s)

Jiyeon Ku of Yongin-si (KR)

Hyowon Kim of Suwon-si (KR)

Wonjun Jang of Suwon-si (KR)

Heeyoon Noh of Seoul (KR)

MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17862675 titled 'MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

Simplified Explanation

The abstract describes a memory device and an electronic device that includes the memory device. The memory device consists of a two-dimensional material layer, a contact region, and an electrode. The electrode is connected to the contact region and can change the domain of a region adjacent to the contact region by applying a voltage.

  • The memory device is made of a two-dimensional material layer.
  • The device has a contact region that is in contact with the edge of the two-dimensional material layer.
  • An electrode is present, which is connected to the contact region.
  • The electrode can modify the domain of a region next to the contact region by applying a voltage.

Potential applications of this technology:

  • Memory devices in electronic devices such as smartphones, tablets, and computers.
  • Storage devices in data centers and servers.
  • Wearable devices and Internet of Things (IoT) devices.

Problems solved by this technology:

  • Provides a memory device that can store and retrieve data efficiently.
  • Offers a compact and lightweight memory solution.
  • Enables faster data access and processing.

Benefits of this technology:

  • Improved performance and efficiency in electronic devices.
  • Increased storage capacity in a smaller form factor.
  • Enhanced data processing speed and responsiveness.


Original Abstract Submitted

Provided is a memory device and an electronic device including the same. The memory device according to an example embodiment may include: a two-dimensional material layer including a two-dimensional material; a contact region in contact with an edge of the two-dimensional material layer; and an electrode which is electrically connected to the contact region and changes a domain of a region adjacent to the contact region of the two-dimensional material layer by an applied voltage.