18169563. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18169563 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
Abstract
A semiconductor device is described in this patent application. The device consists of several components including a word line (WL) structure, a ferroelectric layer, a channel layer, a source line (SL) structure, a bit line (BL) structure, and a dielectric layer.
- The device includes a word line (WL) structure.
- A ferroelectric layer is placed over the WL structure.
- A channel layer is placed over the ferroelectric layer.
- A source line (SL) structure is placed over the channel layer.
- A bit line (BL) structure is placed over the channel layer, with a portion extending laterally towards the SL structure.
- A dielectric layer is placed laterally between the SL structure and the BL structure.
Potential Applications
- Memory devices
- Logic devices
- Data storage devices
- Integrated circuits
Problems Solved
- Improved performance and reliability of semiconductor devices
- Enhanced memory storage capabilities
- Increased data processing speed
Benefits
- Higher density of memory storage
- Faster data processing
- Improved device performance and reliability
Original Abstract Submitted
A semiconductor device includes a word line (WL) structure. The semiconductor device includes a ferroelectric layer over the WL structure. The semiconductor device includes a channel layer over the ferroelectric layer. The semiconductor device includes a source line (SL) structure over the channel layer. The semiconductor device includes a bit line (BL) structure over the channel layer. The BL structure includes a portion that laterally extends toward the SL structure. The semiconductor device further includes a dielectric layer laterally interposed between the SL structure and the BL structure.
