17848406. SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Pei Yun Chung of Hsinchu City (TW)
Chun-Chih Cheng of Changhua County (TW)
Ying-Liang Chuang of Hsinchu County (TW)
Kuo-Bin Huang of Hsinchu County (TW)
SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17848406 titled 'SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a method for forming a semiconductor device using wet etching processes and cleaning steps. Here is a simplified explanation of the abstract:
- A metal layer with a silicon-containing pattern is provided.
- A first wet etching process is performed using a solution containing a base and an oxidant to clean the metal layer's surface.
- Multiple cycles are performed, each consisting of a second wet etching process and a cleaning process.
- The second wet etching process uses a solution containing an acid and an oxidant to remove the metal layer.
- A cleaning process is performed.
Potential Applications
This technology can be applied in various semiconductor device manufacturing processes, including but not limited to:
- Integrated circuits (ICs)
- Transistors
- Diodes
- Solar cells
- Sensors
Problems Solved
The method described in the patent application addresses the following problems in semiconductor device manufacturing:
- Contamination on the metal layer's surface needs to be removed before further processing.
- The metal layer needs to be selectively removed without damaging other components.
- Efficient cleaning processes are required to ensure the quality and reliability of the semiconductor device.
Benefits
The use of this method offers several benefits in semiconductor device manufacturing:
- Effective cleaning of the metal layer's surface, ensuring proper adhesion and compatibility with subsequent layers.
- Selective removal of the metal layer, avoiding damage to other components.
- Improved efficiency and reliability of the semiconductor device manufacturing process.
Original Abstract Submitted
A method of forming a semiconductor device includes the following steps. A metal layer with at least one silicon-containing pattern therein is provided. A first wet etching process is performed by using a first etching solution, to clean a surface of the metal layer, wherein the first etching solution contains a base and a first oxidant. At least one cycle is performed. Each cycle includes a second wet etching process and a cleaning process. The second wet etching process is performed by using a second etching solution, to remove the metal layer, wherein the second etching solution contains an acid and a second oxidant. A cleaning process is performed.
