17847075. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei Ju Lee of Kaohsiung City (TW)

Chun-Fu Cheng of Hsinchu County (TW)

Chung-Wei Wu of Hsinchu County (TW)

Zhiqiang Wu of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17847075 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The abstract of the patent application describes a method for forming a channel region above a substrate and growing source/drain regions on either side of the channel region. A gate structure and source/drain contacts are also formed.

• The method involves forming a channel region above a substrate.
• The channel region has a length extending in a specific direction.
• Epitaxial growing is used to create a plurality of source/drain regions on either side of the channel region.
• A gate structure is formed to surround the channel region.
• A plurality of source/drain contacts are formed on the source/drain regions.

Potential Applications

This technology could have potential applications in various fields, including:

• Semiconductor industry
• Electronics manufacturing
• Integrated circuit design

Problems Solved

The technology addresses several problems in the field, such as:

• Improving the performance and efficiency of semiconductor devices
• Enhancing the functionality of integrated circuits
• Enabling the production of smaller and more powerful electronic devices

Benefits

The technology offers several benefits, including:

• Enhanced performance and efficiency of semiconductor devices
• Improved functionality and capabilities of integrated circuits
• Ability to create smaller and more powerful electronic devices

Original Abstract Submitted

A method includes forming a channel region above a ()-orientated substrate and having a length extending in a <> direction; epitaxial growing a plurality of source/drain regions on either side the channel region; forming a gate structure surrounding the channel region; forming a plurality of source/drain contacts on the source/drain regions.