17849720. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Bo-Jiun Lin of Hsinchu County (TW)

Yu-Chao Lin of Hsinchu City (TW)

Tung-Ying Lee of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17849720 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor device using a transition metal layer and a chalcogen-containing fluid. The method involves the following steps:

• A transition metal layer is formed over a substrate in a reaction chamber.
• A chalcogen-containing fluid is flowed into the reaction chamber.
• A heating process is performed in the reaction chamber, causing the transition metal layer to transform into a two-dimensional (2D) material layer over the substrate.

Potential applications of this technology:

• Manufacturing of semiconductor devices.
• Creation of two-dimensional (2D) material layers for various electronic applications.

Problems solved by this technology:

• Provides a method for manufacturing semiconductor devices using a transition metal layer and a chalcogen-containing fluid.
• Enables the transformation of the transition metal layer into a two-dimensional (2D) material layer.

Benefits of this technology:

• Simplifies the manufacturing process of semiconductor devices.
• Allows for the creation of two-dimensional (2D) material layers with improved properties.
• Offers potential advancements in electronic applications utilizing two-dimensional (2D) materials.

Original Abstract Submitted

A method for manufacturing a semiconductor device includes the following steps. A transition metal layer is formed over a substrate in a reaction chamber; a chalcogen-containing fluid is flowed into the reaction chamber; and a heating process is performed in the reaction chamber over the transition metal layer with the chalcogen-containing fluid to transform the transition metal layer into a two-dimensional (2D) material layer over the substrate.