17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Li-Zhen Yu of New Taipei City (TW)
Huan-Chieh Su of Tianzhong Township (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17836399 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor structure and a method for manufacturing it. The structure includes nanostructures, a gate structure, a source/drain structure, and a filling layer.
- The semiconductor structure includes nanostructures placed over a substrate.
- A gate structure surrounds the nanostructures and consists of gate dielectric layers and gate electrode layers.
- An inner spacer layer is located between the gate structure and the source/drain structure.
- A filling layer is present over the gate structure, with a protrusion portion embedded in a space surrounded by the inner spacer, gate dielectric layer, and gate electrode layer.
- A first source/drain contact structure is formed over the filling layer.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuits
- Transistors
- Electronic devices
Problems solved by this technology:
- Provides a structure that allows for efficient control of nanostructures and their surrounding components.
- Offers improved performance and functionality of semiconductor devices.
- Enhances the manufacturing process by providing a simplified and effective structure.
Benefits of this technology:
- Enables better control and manipulation of nanostructures.
- Enhances the performance and functionality of semiconductor devices.
- Simplifies the manufacturing process, leading to cost savings and improved efficiency.
Original Abstract Submitted
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes nanostructures over a substrate, and a gate structure surrounding the nanostructures. The gate structure includes gate dielectric layers and gate electrode layers. The semiconductor structure also includes a source/drain (S/D) structure adjacent to the gate structure, and an inner spacer layer between the gate structure and the S/D structure. The semiconductor structure further includes a filling layer over the gate structure, and the filling layer has a protrusion portion embedded in a space, the space is surrounded by the inner spacer, the gate dielectric layer and the gate electrode layer. The semiconductor structure also includes a first S/D contact structure formed over the filling layer.
