18455980. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Sung Hun Jung of Suwon-si (KR)
Heon Jong Shin of Yongin-si (KR)
Min Chan Gwak of Hwaseong-si (KR)
Sung Moon Lee of Suwon-si (KR)
Jeong Ki Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18455980 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with two gate structures, an active pattern, an epitaxial pattern, a gate contact, and a node contact. The gate contact is connected to the first gate electrode and is at the same level as the first gate capping pattern. The node contact is connected to the second gate electrode and the epitaxial pattern, and its upper surface is lower than the upper surface of the first gate capping pattern.
- The semiconductor device has two gate structures, allowing for more precise control of the device's operation.
- The active pattern and epitaxial pattern provide a foundation for the device's functionality.
- The gate contact and node contact enable electrical connections to the gate electrodes and epitaxial pattern.
- The positioning of the gate contact and node contact relative to the gate structures ensures proper functionality and electrical connections.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, computers, and IoT devices.
- It can be utilized in power management circuits, amplifiers, and memory devices.
Problems Solved
- The two gate structures provide improved control over the device's operation, allowing for more precise functionality.
- The proper positioning of the gate contact and node contact ensures reliable electrical connections.
Benefits
- The device's improved control and functionality can lead to enhanced performance and efficiency in electronic devices.
- The reliable electrical connections provided by the gate contact and node contact contribute to the device's overall reliability and longevity.
Original Abstract Submitted
A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.
