US Patent Application 18365302. EUV Metallic Resist Performance Enhancement Via Additives simplified abstract

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EUV Metallic Resist Performance Enhancement Via Additives

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

An-Ren Zi of Hsinchu City (TW)

Joy Cheng of Taoyuan City (TW)

Ching-Yu Chang of Yilang County (TW)

EUV Metallic Resist Performance Enhancement Via Additives - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365302 titled 'EUV Metallic Resist Performance Enhancement Via Additives

Simplified Explanation

The patent application describes a method for using a photoresist layer in an extreme ultraviolet (EUV) lithography process. The photoresist layer is made up of a metallic photoresist material and one or more additives. These additives can include a solvent with a boiling point above 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

  • The patent application focuses on a method for using a photoresist layer in EUV lithography.
  • The photoresist layer is made up of a metallic photoresist material and one or more additives.
  • The additives can include a solvent with a boiling point above 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.


Original Abstract Submitted

A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

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