US Patent Application 18447053. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Hsien Huang of Hsinchu (TW)
Chang-Ting Chung of Hsinchu (TW)
Wei-Cheng Lin of Tainan City (TW)
Chih-Wei Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447053 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
- The patent application describes methods for forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device. - The methods involve etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact. - Silicon oxide structures along the sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer are repaired to prevent selective loss defects during subsequent processes. - A selective bottom-up deposition of conductive fill material is performed to form a second source/drain contact. - Once the second source/drain contact is formed, a contact plug can be formed over the gate stack.
Original Abstract Submitted
Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.
