US Patent Application 18303370. GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE simplified abstract
Contents
GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE
Organization Name
Inventor(s)
Frank Sinclair of Hartland ME (US)
Bon-Woong Koo of Andover MA (US)
Tseh-Jen Hsieh of Rowley MA (US)
Gregory E. Stratoti of Haverhill MA (US)
GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18303370 titled 'GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE
Simplified Explanation
- The patent application describes a method for reducing gallium particle formation in an ion implanter. - The method involves performing a gallium implant process in the ion implanter, where a first dose of gallium ions is implanted into a set of substrates. - During the implant process, metallic gallium material is deposited on surfaces within a downstream portion of the ion implanter. - To address this issue, a reactive gas bleed operation is performed in the downstream portion of the ion implanter. - The reactive gas is provided through a gas injection assembly and reacts with the metallic gallium material, altering its properties. - The purpose of the reactive gas bleed operation is to prevent or reduce the formation of gallium particles, which can negatively impact the performance of the ion implanter. - This method aims to improve the efficiency and reliability of ion implantation processes by minimizing gallium particle formation.
Original Abstract Submitted
A method of reducing gallium particle formation in an ion implanter. The method may include performing a gallium implant process in the ion implanter, the gallium implant process comprising implanting a first dose of gallium ions from a gallium ion beam into a first set of substrates, while the first set of substrates are disposed in a process chamber of the beamline ion implanter. As such, a metallic gallium material may be deposited on one or more surfaces within a downstream portion of the ion implanter. The method may include performing a reactive gas bleed operation into at least one location of the downstream portion of the ion implanter, the reactive bleed operation comprising providing a reactive gas through a gas injection assembly, wherein the metallic gallium material is altered by reaction with the reactive gas.
