US Patent Application 17990064. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jae Young Oh of Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17990064 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
- The patent application describes a semiconductor memory device and a method of manufacturing it. - The semiconductor memory device includes a gate stack and a channel structure within the gate stack. - The channel structure consists of a channel layer with two portions: one that penetrates the gate stack and another that extends higher than the gate stack. - A core insulating layer is located in the central region of the channel structure. - A barrier layer is positioned between the channel layer and the core insulating layer. - The purpose of this design is to improve the performance and efficiency of the semiconductor memory device. - The method of manufacturing the device is not specified in the abstract.
Original Abstract Submitted
Provided herein may be a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a gate stack, and a channel structure disposed in the gate stack, wherein the channel structure may include a channel layer including a first portion penetrating the gate stack and a second portion extending from the first portion to protrude higher than the gate stack, a core insulating layer disposed in a central region of the channel structure, and a barrier layer disposed between the channel layer and the core insulating layer.
