US Patent Application 18359507. Semiconductor Device and Method of Manufacturing simplified abstract
Contents
Semiconductor Device and Method of Manufacturing
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
Semiconductor Device and Method of Manufacturing - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359507 titled 'Semiconductor Device and Method of Manufacturing
Simplified Explanation
The patent application describes a method for manufacturing semiconductor devices with improved gate dielectrics.
- The gate dielectric in the analog region of the semiconductor substrate is treated with a plasma exposure and/or an annealing process.
- This treatment forms a recovered region of the gate dielectric, improving its performance.
- A separate gate dielectric is formed in the logic region of the semiconductor substrate.
- First and second gate electrodes are formed over the gate dielectrics.
- The innovation aims to enhance the overall performance and reliability of semiconductor devices.
Original Abstract Submitted
Semiconductor devices and methods of manufacturing are presented wherein a gate dielectric is treated within an analog region of a semiconductor substrate. The gate dielectric may be treated with a plasma exposure and/or an annealing process in order to form a recovered region of the gate dielectric. A separate gate dielectric is formed within a logic region of the semiconductor substrate, and a first gate electrode and second gate electrode are formed over the gate dielectrics.
