US Patent Application 18228224. PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY simplified abstract
Contents
PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shih-Ming Chang of Hsinchu (TW)
PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18228224 titled 'PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY
Simplified Explanation
- The patent application describes a method for generating a layout pattern on an energy-sensitive material using a charged particle beam. - The method involves determining the energy density indirectly exposed to a feature of the layout pattern when it is directly exposed by the charged particle beam. - The second step of the method is adjusting the energy density exposed to the feature when it is directly exposed by the charged particle beam. - The goal is to maintain a total energy density of the feature at a threshold level to ensure full exposure in the energy-sensitive material. - The innovation lies in the combination of indirect and direct exposure to achieve the desired energy density for accurate pattern generation.
Original Abstract Submitted
A method of generating a layout pattern includes determining a first energy density indirectly exposed to a first feature of one or more features of a layout pattern on an energy-sensitive material when the one or more features of the layout pattern on the energy-sensitive material are directly exposed by a charged particle beam. The method also includes adjusting a second energy density exposed the first feature when the first feature is directly exposed by the charged particle beam. A total energy density of the first feature that comprises a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure is maintained at about a threshold energy level to fully expose the first feature in the energy-sensitive material.
