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Bibliographic details for US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract

Citation styles for US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract

APA style

US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract. (2023, November 1). WikiPatents, . Retrieved 10:36, June 2, 2024 from http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826.

MLA style

"US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract." WikiPatents, . 1 Nov 2023, 03:41 UTC. 2 Jun 2024, 10:36 <http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826>.

MHRA style

WikiPatents contributors, 'US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract', WikiPatents, , 1 November 2023, 03:41 UTC, <http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826> [accessed 2 June 2024]

Chicago style

WikiPatents contributors, "US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract," WikiPatents, , http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826 (accessed June 2, 2024).

CBE/CSE style

WikiPatents contributors. US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract [Internet]. WikiPatents, ; 2023 Nov 1, 03:41 UTC [cited 2024 Jun 2]. Available from: http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826.

Bluebook style

US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract, http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826 (last visited June 2, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract --- WikiPatents{,} ",
   year = "2023",
   url = "http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826",
   note = "[Online; accessed 2-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "US Patent Application 17882203. 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER simplified abstract --- WikiPatents{,} ",
   year = "2023",
   url = "\url{http://wikipatents.org/index.php?title=US_Patent_Application_17882203._3D-STACKED_SEMICONDUCTOR_DEVICE_INCLUDING_SOURCE/DRAIN_INNER_SPACERS_FORMED_USING_CHANNEL_ISOLATION_STRUCTURE_INCLUDING_THIN_SILICON_LAYER_simplified_abstract&oldid=4826}",
   note = "[Online; accessed 2-June-2024]"
 }


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