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Bibliographic details for 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- Page name: 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 22 March 2024 09:18 UTC
- Date retrieved: 9 June 2024 11:02 UTC
- Permanent URL: http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124
- Page Version ID: 42124
Citation styles for 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
APA style
18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA). (2024, March 22). WikiPatents, . Retrieved 11:02, June 9, 2024 from http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124.
MLA style
"18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)." WikiPatents, . 22 Mar 2024, 09:18 UTC. 9 Jun 2024, 11:02 <http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124>.
MHRA style
WikiPatents contributors, '18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)', WikiPatents, , 22 March 2024, 09:18 UTC, <http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124> [accessed 9 June 2024]
Chicago style
WikiPatents contributors, "18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)," WikiPatents, , http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124 (accessed June 9, 2024).
CBE/CSE style
WikiPatents contributors. 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA) [Internet]. WikiPatents, ; 2024 Mar 22, 09:18 UTC [cited 2024 Jun 9]. Available from: http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124.
Bluebook style
18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA), http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124 (last visited June 9, 2024).
BibTeX entry
@misc{ wiki:xxx, author = "WikiPatents", title = "18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA) --- WikiPatents{,} ", year = "2024", url = "http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124", note = "[Online; accessed 9-June-2024]" }
When using the LaTeX package url (\usepackage{url}
somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx, author = "WikiPatents", title = "18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA) --- WikiPatents{,} ", year = "2024", url = "\url{http://wikipatents.org/index.php?title=18510840._NITRIDE_SEMICONDUCTOR_WITH_MULTIPLE_NITRIDE_REGIONS_OF_DIFFERENT_IMPURITY_CONCENTRATIONS,_WAFER,_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(KABUSHIKI_KAISHA_TOSHIBA)&oldid=42124}", note = "[Online; accessed 9-June-2024]" }