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Bibliographic details for Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract

Citation styles for Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract

APA style

Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract. (2024, March 21). WikiPatents, . Retrieved 11:58, June 9, 2024 from http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152.

MLA style

"Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract." WikiPatents, . 21 Mar 2024, 09:44 UTC. 9 Jun 2024, 11:58 <http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152>.

MHRA style

WikiPatents contributors, 'Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract', WikiPatents, , 21 March 2024, 09:44 UTC, <http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152> [accessed 9 June 2024]

Chicago style

WikiPatents contributors, "Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract," WikiPatents, , http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152 (accessed June 9, 2024).

CBE/CSE style

WikiPatents contributors. Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract [Internet]. WikiPatents, ; 2024 Mar 21, 09:44 UTC [cited 2024 Jun 9]. Available from: http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152.

Bluebook style

Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract, http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152 (last visited June 9, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152",
   note = "[Online; accessed 9-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=Qualcomm_incorporated_(20240096964)._VERTICAL_CHANNEL_FIELD_EFFECT_TRANSISTOR_(VCFET)_WITH_REDUCED_CONTACT_RESISTANCE_AND/OR_PARASITIC_CAPACITANCE,_AND_RELATED_FABRICATION_METHODS_simplified_abstract&oldid=40152}",
   note = "[Online; accessed 9-June-2024]"
 }


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