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Bibliographic details for 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- Page name: 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 17 March 2024 00:01 UTC
- Date retrieved: 3 June 2024 16:01 UTC
- Permanent URL: http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433
- Page Version ID: 37433
Citation styles for 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
APA style
18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.). (2024, March 17). WikiPatents, . Retrieved 16:01, June 3, 2024 from http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433.
MLA style
"18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)." WikiPatents, . 17 Mar 2024, 00:01 UTC. 3 Jun 2024, 16:01 <http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433>.
MHRA style
WikiPatents contributors, '18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)', WikiPatents, , 17 March 2024, 00:01 UTC, <http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433> [accessed 3 June 2024]
Chicago style
WikiPatents contributors, "18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)," WikiPatents, , http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433 (accessed June 3, 2024).
CBE/CSE style
WikiPatents contributors. 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) [Internet]. WikiPatents, ; 2024 Mar 17, 00:01 UTC [cited 2024 Jun 3]. Available from: http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433.
Bluebook style
18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.), http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433 (last visited June 3, 2024).
BibTeX entry
@misc{ wiki:xxx, author = "WikiPatents", title = "18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ", year = "2024", url = "http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433", note = "[Online; accessed 3-June-2024]" }
When using the LaTeX package url (\usepackage{url}
somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx, author = "WikiPatents", title = "18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ", year = "2024", url = "\url{http://wikipatents.org/index.php?title=18518413._GATE_STRUCTURE,_FIN_FIELD-EFFECT_TRANSISTOR,_AND_METHOD_OF_MANUFACTURING_FIN-FIELD_EFFECT_TRANSISTOR_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37433}", note = "[Online; accessed 3-June-2024]" }