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Bibliographic details for 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)

Citation styles for 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)

APA style

18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation). (2024, January 4). WikiPatents, . Retrieved 18:39, May 28, 2024 from http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573.

MLA style

"18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)." WikiPatents, . 4 Jan 2024, 01:55 UTC. 28 May 2024, 18:39 <http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573>.

MHRA style

WikiPatents contributors, '18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)', WikiPatents, , 4 January 2024, 01:55 UTC, <http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573> [accessed 28 May 2024]

Chicago style

WikiPatents contributors, "18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)," WikiPatents, , http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573 (accessed May 28, 2024).

CBE/CSE style

WikiPatents contributors. 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation) [Internet]. WikiPatents, ; 2024 Jan 4, 01:55 UTC [cited 2024 May 28]. Available from: http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573.

Bluebook style

18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation), http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573 (last visited May 28, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573",
   note = "[Online; accessed 28-May-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18093932._CMOS_TOP_SOURCE/DRAIN_REGION_DOPING_AND_EPITAXIAL_GROWTH_FOR_A_VERTICAL_FIELD_EFFECT_TRANSISTOR_simplified_abstract_(International_Business_Machines_Corporation)&oldid=23573}",
   note = "[Online; accessed 28-May-2024]"
 }


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