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Bibliographic details for 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Citation styles for 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

APA style

17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.). (2024, January 2). WikiPatents, . Retrieved 05:44, June 8, 2024 from http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536.

MLA style

"17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)." WikiPatents, . 2 Jan 2024, 02:59 UTC. 8 Jun 2024, 05:44 <http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536>.

MHRA style

WikiPatents contributors, '17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)', WikiPatents, , 2 January 2024, 02:59 UTC, <http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536> [accessed 8 June 2024]

Chicago style

WikiPatents contributors, "17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)," WikiPatents, , http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536 (accessed June 8, 2024).

CBE/CSE style

WikiPatents contributors. 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.) [Internet]. WikiPatents, ; 2024 Jan 2, 02:59 UTC [cited 2024 Jun 8]. Available from: http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536.

Bluebook style

17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.), http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536 (last visited June 8, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536",
   note = "[Online; accessed 8-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=17725722._Forming_Silicon-Containing_Material_Over_Metal_Gate_To_Reduce_Loading_Between_Long_Channel_And_Short_Channel_Transistors_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=19536}",
   note = "[Online; accessed 8-June-2024]"
 }


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