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Show new changes starting from 13:53, 8 June 2024
   
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6 June 2024

N    06:10  18514338. MOSFET GATE FORMATION simplified abstract (NEXPERIA B.V.) diffhist +4,547 Wikipatents talk contribs Creating a new page
N    04:50  18082080. THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY simplified abstract (Yangtze Memory Technologies Co., Ltd.) diffhist +4,242 Wikipatents talk contribs Creating a new page
N    04:48  18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.) diffhist +4,423 Wikipatents talk contribs Creating a new page
N    03:45  18353758. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation) diffhist +3,515 Wikipatents talk contribs Creating a new page
N    02:24  18097274. SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) diffhist +3,893 Wikipatents talk contribs Creating a new page
N    02:23  18165867. SEMICONDUCTOR DEVICE AND LOGIC DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) diffhist +3,913 Wikipatents talk contribs Creating a new page
N    02:22  18437130. APPARATUS AND METHODS FOR GENERATING A CIRCUIT WITH HIGH DENSITY ROUTING LAYOUT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) diffhist +4,979 Wikipatents talk contribs Creating a new page
N    02:20  18435140. Transistor Gate Structure and Method of Forming simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) diffhist +3,747 Wikipatents talk contribs Creating a new page
N    02:20  18412173. FLUORINE INCORPORATION METHOD FOR NANOSHEET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) diffhist +3,830 Wikipatents talk contribs Creating a new page
N    02:12  18072564. FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS simplified abstract (Intel Corporation) diffhist +4,248 Wikipatents talk contribs Creating a new page
N    02:07  17994487. SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +4,408 Wikipatents talk contribs Creating a new page
N    02:07  18071974. SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +4,709 Wikipatents talk contribs Creating a new page
N    02:06  18059093. SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +3,544 Wikipatents talk contribs Creating a new page
N    02:06  18060544. BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +4,469 Wikipatents talk contribs Creating a new page
N    02:06  18060056. LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +4,730 Wikipatents talk contribs Creating a new page
N    02:06  18060003. LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +4,156 Wikipatents talk contribs Creating a new page
N    02:06  18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION) diffhist +3,308 Wikipatents talk contribs Creating a new page