View source for US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract

=Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Hongfa Luan of Baoshan (TW)|Hongfa Luan of Baoshan (TW)]][[Category:Hongfa Luan of Baoshan (TW)]]

[[:Category:Yi-Fan Chen of New Taipei City (TW)|Yi-Fan Chen of New Taipei City (TW)]][[Category:Yi-Fan Chen of New Taipei City (TW)]]

[[:Category:Chun-Yen Peng of Hsinchu (TW)|Chun-Yen Peng of Hsinchu (TW)]][[Category:Chun-Yen Peng of Hsinchu (TW)]]

[[:Category:Cheng-Po Chau of Tainan City (TW)|Cheng-Po Chau of Tainan City (TW)]][[Category:Cheng-Po Chau of Tainan City (TW)]]

[[:Category:Wen-Yu Ku of Hsinchu (TW)|Wen-Yu Ku of Hsinchu (TW)]][[Category:Wen-Yu Ku of Hsinchu (TW)]]

[[:Category:Huicheng Chang of Tainan City (TW)|Huicheng Chang of Tainan City (TW)]][[Category:Huicheng Chang of Tainan City (TW)]]

==Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18358609 titled 'Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer

==Simplified Explanation==

The patent application describes a thermal treatment process that can be used after a high-pressure anneal process in a field effect transistor.
* The thermal treatment process helps to keep hydrogen at the interface between a channel region and a gate dielectric layer.
* It also removes hydrogen from the bulk portion of the gate dielectric layer.
* This process can reduce the amount of threshold voltage shift caused by a high-pressure anneal.
* The high-pressure anneal and thermal treatment process can be performed at any time after the gate dielectric layer is formed.
* This process does not disrupt the existing process flow.


==Original Abstract Submitted==

Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.



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