View source for US Patent Application 18357500. Partial Barrier Free Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof simplified abstract

=Partial Barrier Free Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Co., Ltd.]]


==Inventor(s)==

[[Tsung-Ling Tsai of Hsinchu City (TW)]]

[[Shen-Nan Lee of Hsinchu County (TW)]]

[[Mrunal A. Khaderbad of Hsinchu City (TW)]]

[[Chung-Wei Hsu of Hsinchu (TW)]]

[[Chen-Hao Wu of Hsinchu (TW)]]

[[Teng-Chun Tsai of Hsinchu City (TW)]]

==Partial Barrier Free Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18357500 titled 'Partial Barrier Free Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof

==Simplified Explanation==

- The patent application describes a method for forming partial barrier-free vias in a multilayer interconnect structure.
- The interconnect structure includes a dielectric layer, a cobalt-comprising interconnect feature, and a partial barrier-free via.
- The partial barrier-free via consists of a first via plug portion, a second via plug portion, and a via barrier layer.
- The first via plug portion physically contacts both the cobalt-comprising interconnect feature and the dielectric layer.
- The second via plug portion is placed over the first via plug portion, with the via barrier layer in between.
- The via barrier layer is also located between the second via plug portion and the dielectric layer.
- The cobalt-comprising interconnect feature can be a device-level contact or a conductive line in the multilayer interconnect structure.
- The first and second via plug portions can be made of tungsten, cobalt, and/or ruthenium.


==Original Abstract Submitted==

Partial barrier-free vias and methods for forming such are disclosed herein. An exemplary interconnect structure of a multilayer interconnect feature includes a dielectric layer. A cobalt-comprising interconnect feature and a partial barrier-free via are disposed in the dielectric layer. The partial barrier-free via includes a first via plug portion disposed on and physically contacting the cobalt-comprising interconnect feature and the dielectric layer, a second via plug portion disposed over the first via plug portion, and a via barrier layer disposed between the second via plug portion and the first via plug portion. The via barrier layer is further disposed between the second via plug portion and the dielectric layer. The cobalt-comprising interconnect feature can be a device-level contact or a conductive line of the multilayer interconnect feature. The first via plug portion and the second via plug portion can include tungsten, cobalt, and/or ruthenium.