View source for US Patent Application 18355549. THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE simplified abstract

=THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Company, Ltd.]]


==Inventor(s)==

[[Yi-Huan Chen of Hsin Chu City (TW)]]

[[Kong-Beng Thei of Pao-Shan Village (TW)]]

[[Chien-Chih Chou of New Taipei City (TW)]]

[[Alexander Kalnitsky of San Francisco CA (US)]]

[[Szu-Hsien Liu of Zhubei City (TW)]]

[[Huan-Chih Yuan of Zhubei City (TW)]]

==THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18355549 titled 'THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE

==Simplified Explanation==

The patent application describes a semiconductor device with a well region, source and drain regions, and a gate electrode.
* The device includes a substrate with a well region, and source and drain regions arranged within the substrate.
* A gate electrode is positioned over the well region, extending between the source and drain regions.
* A trench isolation structure surrounds the source region, drain region, and gate electrode.
* A gate dielectric structure separates the gate electrode from the well region, source and drain regions, and trench isolation structure.
* The gate electrode has a central portion and a corner portion, with the corner portion being thicker than the central portion.


==Original Abstract Submitted==

In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.