View source for US Patent Application 18354824. NEW WAS CELL FOR SRAM HIGH-R ISSUE IN ADVANCED TECHNOLOGY NODE simplified abstract

=NEW WAS CELL FOR SRAM HIGH-R ISSUE IN ADVANCED TECHNOLOGY NODE=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Company, Ltd.]]


==Inventor(s)==

[[Yangsyu Lin of Hsinchu (TW)]]

[[Po-Sheng Wang of Hsinchu (TW)]]

[[Cheng Hung Lee of Hsinchu (TW)]]

[[Jonathan Tsung-Yung Chang of Hsinchu (TW)]]

==NEW WAS CELL FOR SRAM HIGH-R ISSUE IN ADVANCED TECHNOLOGY NODE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18354824 titled 'NEW WAS CELL FOR SRAM HIGH-R ISSUE IN ADVANCED TECHNOLOGY NODE

==Simplified Explanation==

The patent application describes a memory device with a memory array consisting of multiple memory cells arranged in rows and columns.
* The memory array also includes write assist cells that are connected to the memory cells.
* Each column in the memory array has at least one write assist cell, which is connected to the memory cells in the same column.
* The purpose of the write assist cells is to enhance the writing process in the memory cells.
* This design allows for improved performance and efficiency in memory operations.


==Original Abstract Submitted==

A memory device includes a memory array having a plurality of memory cells arranged along a plurality of rows extending in a row direction and a plurality of columns extending in a column direction. The memory array also includes a plurality of write assist cells connected to the plurality of memory cells. At least one write assist cell of the plurality of write assist cells is in each of the plurality of columns and connected to respective ones of the plurality of memory cells in a same column.