View source for US Patent Application 18336399. Metal-Compound-Removing Solvent And Method In Lithography simplified abstract

=Metal-Compound-Removing Solvent And Method In Lithography=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Co., Ltd.]]


==Inventor(s)==

[[An-Ren Zi of Hsinchu City (TW)]]


[[Joy Cheng of Taoyuan City (TW)]]


[[Ching-Yu Chang of Yilang County (TW)]]


==Metal-Compound-Removing Solvent And Method In Lithography - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 18336399 Titled 'Metal-Compound-Removing Solvent And Method In Lithography'

==Simplified Explanation==

In this study, a process called extreme ultraviolet (EUV) lithography was used to create a pattern on a wafer coated with a photoresist layer containing a metal-containing material. After the lithography process, the wafer was cleaned using a specific cleaning fluid. This cleaning fluid contained a solvent with specific solubility parameters, including a range of values for delta D, delta P, and delta H. Additionally, the solvent contained either an acid with a low acid dissociation constant or a base with a high acid dissociation constant. The purpose of the cleaning process was to remove the metal-containing material from the wafer.


==Original Abstract Submitted==

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.