View source for US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract

=METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Company, Ltd.]]


==Inventor(s)==

[[Chun-Hung Chen of Hsinchu (TW)]]


[[Chih-Hung Hsieh of Hsin-Chu (TW)]]


[[Jhon Jhy Liaw of Hsinchu County (TW)]]


==METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 18335065 Titled 'METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS'

==Simplified Explanation==

The abstract describes a type of field-effect transistor device that has a specific structure. It consists of a substrate with different doped regions and blocks, fins, insulators, and gate stacks. The substrate has two doped regions and blocks located above them. The doping concentrations of the blocks are lower than the doping concentrations of the corresponding regions. The fins are located above the blocks. Insulators are placed on the blocks and cover the fins. Dielectric strips are positioned between the fins and between the blocks. Finally, gate stacks are placed over the fins and above the insulators.


==Original Abstract Submitted==

A fin-type field-effect transistor device includes a substrate, insulators, gate stacks and dielectric strips. The substrate includes a first doped region, a second doped region, third doped blocks located above the first doped region and fourth doped blocks located above the second doped region, and fins located above the third doped blocks and the fourth doped blocks, wherein doping concentrations of the third doped blocks are lower than a doping concentration of the first doped region, and doping concentrations of the fourth doped blocks are lower than a doping concentration of the second doped region. The insulators are disposed on the third doped blocks and the fourth doped blocks of the substrate and covering the fins. The dielectric strips are disposed in between the fins, and in between the third doped blocks and the fourth doped blocks. The gate stacks are disposed over the fins and above the insulators.