View source for US Patent Application 18228224. PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY simplified abstract

=PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Wen Lo of Hsinchu (TW)|Wen Lo of Hsinchu (TW)]][[Category:Wen Lo of Hsinchu (TW)]]

[[:Category:Shih-Ming Chang of Hsinchu (TW)|Shih-Ming Chang of Hsinchu (TW)]][[Category:Shih-Ming Chang of Hsinchu (TW)]]

==PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18228224 titled 'PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY

==Simplified Explanation==

- The patent application describes a method for generating a layout pattern on an energy-sensitive material using a charged particle beam.
- The method involves determining the energy density indirectly exposed to a feature of the layout pattern when it is directly exposed by the charged particle beam.
- The second step of the method is adjusting the energy density exposed to the feature when it is directly exposed by the charged particle beam.
- The goal is to maintain a total energy density of the feature at a threshold level to ensure full exposure in the energy-sensitive material.
- The innovation lies in the combination of indirect and direct exposure to achieve the desired energy density for accurate pattern generation.


==Original Abstract Submitted==

A method of generating a layout pattern includes determining a first energy density indirectly exposed to a first feature of one or more features of a layout pattern on an energy-sensitive material when the one or more features of the layout pattern on the energy-sensitive material are directly exposed by a charged particle beam. The method also includes adjusting a second energy density exposed the first feature when the first feature is directly exposed by the charged particle beam. A total energy density of the first feature that comprises a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure is maintained at about a threshold energy level to fully expose the first feature in the energy-sensitive material.



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