View source for US Patent Application 18142112. CORRECTIVE READS WITH IMPROVED RECOVERY FROM DATA RETENTION LOSS simplified abstract

=CORRECTIVE READS WITH IMPROVED RECOVERY FROM DATA RETENTION LOSS=


==Organization Name==

[[Micron Technology, Inc.]]


==Inventor(s)==

[[Huai-Yuan Tseng of San Ramon CA (US)]]

[[Akira Goda of Tokyo (JP)]]

[[Ching-Huang Lu of Fremont CA (US)]]

[[Eric N. Lee of San Jose CA (US)]]

[[Tomoharu Tanaka of Yokohama (JP)]]

==CORRECTIVE READS WITH IMPROVED RECOVERY FROM DATA RETENTION LOSS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18142112 titled 'CORRECTIVE READS WITH IMPROVED RECOVERY FROM DATA RETENTION LOSS

==Simplified Explanation==

The patent application describes a method for reading a target cell in a memory system.
* The method involves obtaining state information for two adjacent cells next to the target cell.
* A state information bin is determined by applying a predefined operation to the state information of the adjacent cells.
* The target cell is then assigned to the state information bin.
* Each state information bin defines a read level offset, which is used to read the target cell.


==Original Abstract Submitted==

A read is initiated with respect to a target cell. A pair of adjacent cells includes a first cell and a second cell each adjacent to the target cell. First cell state information is obtained for the first cell and second cell state information is obtained for the second cell. A state information bin is determined by applying a pre-defined operation to the first cell state information and the second cell state information of the respective pair of adjacent cells. The target cell is assigned to the state information bin. Each state information bin defines a read level offset for reading the target cell.